unisonic technologies co., ltd mmbt2907a pnp silicon transistor www.unisonic.com.tw 1 of 6 copyright ? 2009 unisonic technologies co., ltd qw-r220-001.d pnp general purpose amplifier ? description this utc mmbt2907a is designed for use as a general purpose amplifier and switch requiring collector currents to 500 ma. lead-free: mmbt2907al halogen-free:mmbt2907ag ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing mmbt2907a-ae3-r mmbt2907al-ae3-r mmbt2907ag-ae3-r sot-23 e b c tape reel MMBT2907A-AL3-R mmbt2907al-al3-r mmbt 2907ag-al3-r sot-323 e b c tape reel ? marking 2f l: lead free g: halogen free
mmbt2907a pnp silicon transistor unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r220-001.d ? absolute maximum rating (ta=25 unless otherwise specified) parameter symbol ratings unit collector-emitter voltage v ceo -60 v collector-base voltage v cbo -60 v emitter-base voltage v ebo -5 v collector current continuous i c -800 ma sot-23 350 mw power dissipation sot-323 p d 275 mw junction temperature t j +150 storage temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit sot-23 357 c/w junction to case sot-323 ja 455 c/w ? electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics collector-emitter breakdown voltage (note) bv ceo i c =-10ma, i b =0 - 60 v collector-base breakdown voltage bv cbo i c = - 10 a, i e =0 -60 v emitter-base breakdown voltage bv ebo i e = - 10 a , i c =0 - 5 v base cutoff current i b v cb = - 30v, v eb = - 0.5v - 50 na collector cutoff current i cex v ce = - 30v, v be = - 0.5v - 50 na v cb = - 50v, i e =0 - 0.02 a collector cutoff current i cbo v cb = - 50v, i e =0, t a =150 - 20 a on characteristics i c = - 0.1ma, v ce = - 10v 75 i c = - 1.0 ma, v ce = - 10v 100 i c = - 10 ma, v ce = - 10v 100 i c = - 150 ma, v ce = - 10v (note) 100 300 dc current gain h fe i c = - 500 ma, v ce = - 10v (note) 50 i c = - 150 ma, i b = - 15ma - 0.4 v collector-emitter saturati on voltage (note) v ce(sat) i c = - 500 ma, i b = - 50ma - 1.6 v i c = - 150 ma, i b = - 15ma (note) - 1.3 v base-emitter satura tion voltage v be(sat) i c = - 500 ma, i b = - 50ma - 2.6 v small signal characteristics current gain ? bandwidth product f t i c =-50ma, v ce =-20v, f=100mhz 200 mhz output capacitance c ob v cb =-10v, i e =0, f=100khz 8 pf input capacitance c ib v eb =-2v, i c =0, f=100khz 30 pf switching characteristics turn-on time t on 45 ns delay time t dly 10 ns rise time t r v cc =30v, i c =-150ma, i b1 =-15ma 40 ns turn-off time t off 100 ns storage time t s 80 ns fall time t f v cc =6v, i c =-150ma, i b1 = i b2 =-15ma 30 ns note: pulse test: pulse width 300ms, duty cycle 2.0%
mmbt2907a pnp silicon transistor unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r220-001.d ? test circuits
mmbt2907a pnp silicon transistor unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r220-001.d ? typical characteristics -0.1 -1 -10 -100 -300 200 0 collector current, i c (ma) typical pulsed current gain vs collector current dc current gain, h fe -0.1 100 -0.4 -100 -1 -10 -500 collector emitter saturation voltage vs collector current collector emitter voltage, v ce(sat) (v) -0.3 -0.3 -3 -30 300 400 500 125 25 -0.5 collector current, i c (ma) -40 =10 v ce =-5v -40 0 -0.2 125 25 -0.4 -0.8 -100 -1 -10 -500 base emitter saturation voltage vs collector current base emitter voltage, v be(sat) (v) -0.6 -1 collector current, i c (ma) =10 -0.4 -0.8 -10 -0.1 -1 -25 base emitter on voltage vs collector current base emitter on voltage, v be(on) (v) -0.6 -1 collector current, i c (ma) -0.2 -0.2 0 25 -40 125 0 v ce =-5v 125 25 -40 ambient temperature, t a ( ) collector cutoff current vs ambient temperature c o l l e c t o r c u r r e n t , i c bo ( n a ) -0.1 75 25 50 100 125 -100 -1 -10 v cb =-35v 0.1 110 -50 12 4 reverse bias voltage (v) input and output capacitance vs reverse bias voltage capacitance (pf) 8 16 20 c ob 0.01 0 c te
mmbt2907a pnp silicon transistor unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r220-001.d ? typical characteristics(cont.) time (ns) time (ns) turn on base current, i b1 (ma)
mmbt2907a pnp silicon transistor unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r220-001.d ? typical common emitter characteristics (f=1khz) collector voltage, v ce (v) -12 -4 -8 common emitter characteristics relative to values at v ce =10v, char -20 -16 0.8 hoe hre hfe hie i c =-10ma t a =25 2 -5 -1 -2 -30 common emitter characteristics relative to values at i c =10ma, char 1 5 -50 -20 0.1 collector current, i c (ma) hre h fe 0.5 0.2 hie v ce =-10v t a =25 hoe hre and hoe hie h fe 0.9 1 1.1 1.2 1.3 char.relative to voltage at t a =25 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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